smd type transistors 1.80 +0.1 -0.1 4.50 +0.1 -0.1 2.50 +0.1 -0.1 0.80 +0.1 -0.1 4.00 +0.1 -0.1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2.60 +0.1 -0.1 0.40 +0.1 -0.1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter 2SD1766 features low v ce(sat) ,v ce(sat) = 0.5v (typical) (i c =2a,i b =0.2a). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 32 v emitter-base voltage v ebo 5v collector current i c 2a i c (pulse) * 1 2.5 a collector power dissipation p c 0.5 w p c * 2 2w junction temperature t j 150 storage temperature t stg -55to+150 *1. pw=20ms. *2. 40 40 0.7mm ceramic board. h fe classification marking rank p q r h fe 82 180 120 270 180 390 db electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base voltage bv cbo i c =50a 40 v collector-emitter voltage bv ceo i c =1ma 32 v emitter-base voltage bv ebo i e =50a 5 v collector cutoff current i cbo v cb =20v 1 a emitter cutoff current i ebo v eb =4v 1 a forward current transfer ratio h fe v ce =3v,i c =0.5a 82 390 collector-emitter saturation voltage v ce(sat) i c =2a,i b =0.2a 0.5 0.8 v transition frequency f t v ce =5v, i e = -500ma, f=100mhz 100 mhz output capacitance c ob v cb =10v, i e =0a, f=1mhz 30 pf smd type transistors product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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